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FDS8333C
August 2002
FDS8333C
30V N & P-Channel PowerTrench(R) MOSFETs
General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
* Q1 4.1 A, 30V. RDS(ON) = 80 m @ V GS = 10 V RDS(ON) = 130 m @ V GS = 4.5 V -3.4 A, 30V. RDS(ON) = 130 m @ V GS = -10 V RDS(ON) = 200 m @ V GS = -4.5 V
*
Q2
* * *
Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package.
Q2
D1 D
D1 D
DD2 D2 D
5 6
Q1
4 3 2 1
SO-8
Pin 1 SO-8
G2 S2 G G1 S S1 S
7 8
S
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
TA=25oC unless otherwise noted
Parameter
Q1
30 16
(Note 1a)
Q2
-30 20 -3.4 -20 2 1.6 1 0.9 -55 to +150
Units
V A
4.1 20
- Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
TJ , TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W
Package Marking and Ordering Information
Device Marking FDS8333C Device FDS8333C Reel Size 7'' Tape width 12mm Quantity 2500 units
(c)2002 Fairchild Semiconductor Corporation
FDS8333C Rev C (W)
FDS8333C
Electrical Characteristics
Symbol Parameter Off Characteristics
BV DSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
TA = 25C unless otherwise noted
Test Conditions
V GS = 0 V, ID = 250 A V GS = 0 V, ID = -250 A ID = 250 A,Ref. to 25C ID = -250 A,Ref. to 25C V DS = 24 V, V GS = 0 V V DS = -24 V, V GS = 0 V V GS = 16 V, V DS = 0 V V GS = 20V , V DS = 0 V V DS = V GS , ID = 250 A V DS = V GS , ID = -250 A ID = 250 A,Ref. To 25C Q1 ID = -250 A,Ref. to 25C Q2 V GS = 10 V, ID = 4.1 A V GS = 4.5 V, ID = 3.2 A V GS = 10 V, ID = 4.1 A TJ =125C V GS = -10 V, ID = -3.4 A V GS = - 4.5 V, ID = -2.5 A V GS = -10V,ID = -3.4A, TJ =125C V GS = 10 V, V DS = 5 V V GS = -10 V, V DS = -5 V V DS = 5 V V DS = -5 V ID = 4.1 A ID = -3.4A Q1 Q2 Q1 Q2 Q1 Q2
Min
30 -30
Typ Max
Units
V 25 -22 1 -1 100 100 mV/C A nA nA
IGSSF /IGSSR Gate-Body Leakage, Forward IGSSF /IGSSR Gate-Body Leakage, Reverse
On Characteristics
V GS(th) VGS(th) TJ RDS(on)
(Note 2)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
Q1 Q2
1 -1
1.7 -1.8 -4.2 3.7 67 81 103 105 167 147
3 -3
V
mV/C 80 130 145 130 200 220 A m
Q1
Q2
ID(on) gFS
On-State Drain Current Forward Transconductance
Q1 Q2 Q1 Q2
10 -5 9 5
S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 Gate Resistance Q1 Q2 V DS=10 V, V GS = 0 V, f=1.0MHz V DS=-10 V, V GS = 0 V, f=1.0MHz V DS=10 V, V GS = 0 V, f=1.0MHz V DS=-10 V, V GS = 0 V, f=1.0MHz V DS=10 V, V GS = 0 V, f=1.0MHz V DS=-10 V, V GS = 0 V, f=1.0MHz V GS = 15 mV, f=1.0MHz V GS =-15 mV, f=1.0MHz 282 185 49 56 20 26 2.3 -9.6 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 2)
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
For Q1: V DS =10 V, I DS= 1 A V GS = 4.5 V, RGEN = 6 For Q2: V DS =-10 V, I DS= -1 A V GS = -4.5 V, RGEN = 6
For Q1: V DS =10 V, I DS= 4.1 A V GS = 4.5 V, RGEN = 6 For Q2: V DS =-10 V, I DS= -3.4 A V GS = -4.5 V,
4.5 4.5 6 13 19 11 1.5 2 4.7 4.1 0.9 0.8 0.6 0.4
9 9 12 23 34 20 3 4 6.6 5.7
ns ns ns ns nC nC nC
FDS8333C Rev C (W)
FDS8333C
Electrical Characteristics
Symbol
V SD trr Qrr
TA = 25C unless otherwise noted
Parameter
Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Q1 Q2 Q1 Q2 Q1 Q2
Test Conditions
V GS = 0 V, IS = 1.3 A V GS = 0 V, IS = -1.3 A
Min
Typ Max
0.8 0.8 16.3 14.5 26.7 21.1 1.2 -1.2
Units
Drain-Source Diode Characteristics and Maximum Ratings
(Note 2) (Note 2)
V nS nC
IF = 4.1 A, diF/dt = 100 A/s IF = -3.4 A, diF/dt = 100 A/s IF = 4.1 A, diF/dt = 100 A/s IF = -3.4 A, diF/dt = 100 A/s
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when mounted on a 0.5in2 pad of 2 oz copper
b)
125C/W when mounted on a 0.02 in2 pad of 2 oz copper
c)
135C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS8333C Rev C (W)
FDS8333C
Typical Characteristics: N-Channel
10
2
V GS = 10V 6.0V
8 ID, DRAIN CURRENT (A)
4.5V 3.5V
RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6
V GS = 3.0V
6
3.5V
1.4
4
3.0V
4.0V
1.2
4.5V 6.0V 10V
2
1
0 0 1 2 3 V DS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 2 4 6 ID, DRAIN CURRENT (A) 8 10
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.25 RDS(ON) , ON-RESISTANCE (OHM)
1.6 R DS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE
ID = 4.1A V GS = 10V
ID = 2 A 0.2
1.4
1.2
0.15
1
T A = 125o C
0.1 T A = 25 C 0.05
o
0.8
0.6 -50
-25
0
25
50
75
100
o
125
150
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( C)
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
10 100 IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
V DS =5V
8 ID, DRAIN CURRENT (A)
TA =-55 C
o
25oC 125o C
V GS = 0V
10
T A = 125 C
1
o
o
6
25 C
0.1
4
-55 C
0.01 0.001
o
2
0 1.5 2 2.5 3 3.5 4 V GS, GATE TO SOURCE VOLTAGE (V)
0.0001 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8333C Rev C (W)
FDS8333C
Typical Characteristics: N-Channel (continued)
10 V GS, GATE-SOURCE VOLTAGE (V)
400
ID = 4.1A V DS = 5V 10V 15V f = 1MHz V GS = 0 V
8
6
CAPACITANCE (pF)
300
CISS
200
4
2
100
COSS CRSS
0 0 1 2 3 4 5 Q g, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID , DRAIN CURRENT (A) 10 100s 1ms 10ms 100ms 1 10s VGS = 10V SINGLE PULSE RJ A = 135o C/W T A = 25o C 0.01 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) DC 1s 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE R JA = 135C/W T A = 25C
30
20
0.1
10
0 0.001
0.01
0.1
1 t 1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS8333C Rev C (W)
FDS8333C
Typical Characteristics: P-Channel
10
3
-6.0V -4.5V
-I D, DRAIN CURRENT (A)
8
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V GS = -10V
VGS = -3.5V
2.5
6
-4.0V
2
-4.0V -4.5V -5.0V -6.0V -10V
4
-3.5V
1.5
2
1
0 0 1 2 3 4 5 -V DS, DRAIN-SOURCE VOLTAGE (V)
0.5 0 2 4 6 8 10 -ID, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
0.4 R DS(ON) , ON-RESISTANCE (OHM)
1.6 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -3.4A VGS =-10V 1.4
ID = -1.7A 0.3 T A = 125o C 0.2
1.2
1
0.8
0.1
TA = 25o C
0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (oC)
0 2 4 6 8 -V GS , GATE TO SOURCE VOLTAGE (V) 10
Figure 13. On-Resistance Variation withTemperature.
5
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
10 -IS, REVERSE DRAIN CURRENT (A)
VD S = -5V -I D, DRAIN CURRENT (A) 4
TA = -55 C 125oC
o
25o C
VGS = 0V
1
TA = 125 C
o
3
0.1
25o C
2
0.01
-55 C
o
1
0.001
0 1.5 2.5 3.5 4.5 -V GS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8333C Rev C (W)
FDS8333C
Typical Characteristics: P-Channel (continued)
10 -V GS, GATE-SOURCE VOLTAGE (V) ID = -3.4A 8 VD S = -5V -15V 6 -10V
300 250 CAPACITANCE (pF) C ISS 200 150 COSS 100 50 CRSS 0
0 1 2 3 4 5
f = 1MHz VGS = 0 V
4
2
0 Q g, GATE CHARGE (nC)
0
5
10
15
20
25
30
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) 100s 1ms 10ms 100ms 1 10s VGS = -10V SINGLE PULSE RJ A = 135o C/W T A = 25o C 0.01 0.1 1 10 100 -V DS, DRAIN-SOURCE VOLTAGE (V) DC 1s 50
Figure 18. Capacitance Characteristics.
-I D, DRAIN CURRENT (A)
10
R DS(ON) LIMIT
40
SINGLE PULSE R JA = 135C/W T A = 25C
30
20
0.1
10
0 0.001
0.01
0.1
1 t 1, TIME (sec)
10
100
1000
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * R JA RJA = 135 C/W
0.1 0.05 0.02 0.01 SINGLE PULSE
o
0.1
P(pk) t1 t2 TJ - T A = P * RJA(t) Duty Cycle, D = t1 / t 2
0.01
0.001 0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS8333C Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

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